发表论文

Bipolar Technology
The full text most of these papers may be found at the IEEE website at www.ieee.org.

Y. P. Snitovsky, V. A. Efremov,
"New approach to the manufacturing of power microwave bipolar transistors at an irradiation of ohmic contacts: a computer simulation",
Proceedings of the SPIE - The International Society for Optical Engineering, Vol. 7377, 2008, pp. 737718

T. Tauqeer, J. Sexton, F. Amir, M. Missous,
"Two-Dimensional Physical and Numerical Modelling of InP-based Heterojunction Bipolar Transistors",
Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on 12-16 Oct. 2008 pp. 271 - 274.

Jung-Hui Tsai, I-Hsuan Hsu, Chien-Ming Li, Ning-Xing Su, Yi-Zhen Wu, Yin-Shan Huang,
"Comparison of heterostructure-emitter bipolar transistors (HEBTs) with InGaAs/GaAs superlattice and quantum-well base structures",
Solid-State Electronics, Vol. 52, Issue 7, July 2008, pp. 1018-1023.

J. M. Lopez-Gonzalez
"Emitter Pedestal Design of GaInP/GaAs Heterojunction Bipolar Transistors",
2007 Spanish Conference on Electron Devices, January 2007, pp. 348-350.

S. Mil'shtein, A. Churi, J. Palma, "Bipolar transistor with quantum well base,"
Microelectronics Journal, Vol. 39, No. 3-4, March/April 2008, Pages 631-634.

Christian Schippel, Jun Fu, Frank Schwierz "The influence of collector dopant
profile on breakdown voltage and cutoff frequency of Si-based RF bipolar
transistors" Physica Status Solidi (c), Vol. 3, Issue 3, Mar. 2006, Pages
494-498.

B. Schlothmann, R. M. Bertenburg, M. Agethen, P. Velling, W. Brockerhoff, F.-J.
Tegude "Two-dimensional physical simulation of InGaAs/InP heterostructure
bipolar transistors," Physica Status Solidi (c), Volume 0, Issue 3, Feb. 2003,
Pages 922-927.

S. Nigrin, G.A. Armstrong and A. Kranti, "Optimisation of trench isolated bipolar transistors on SOI substrates by 3D electro-thermal simulations", Solid-State Electronics, Vol. 51, Issue 9, September 2007, pp. 1221-1228.

C. Piemonte, G. Batignani, S. Bettarini, M. Bondioli, M. Boscardin, L. Bosisio, G. F. Dalla Betta, S. Dittongo, F. Forti, M. Giorgi, P. Gregori, I. Rachevskaia, S. Ronchin, N. Zorzi
"Characterization of BJT-based particle detectors"
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detect

M. Jagadesh Kumar, C. L. Reddy
"Realising wide bandgap P-SiC-emitter lateral heterojunction bipolar transistors with low collector-emitter offset voltage and high current gain: A novel proposal using numerical simulation"
IEE Proceedings: Circuits, Devices and Systems, Vol. 151, Issue 5, October 2004, pp. 399-405

K. P. Roenker, R. Sampathkumaran, A. Breed
"Effects of collector heterojunction displacement from its p-n junction on the unilateral power gain at 10 GHz in SiGe HBTs"
Semiconductor Science and Technology, Vol. 19, Issue 9, September 2004, pp. 1131-1137

M. J. Kumar and V. Parihar
"Surface accumulation layer transistor (SALTran): A new bipolar transistor for enhanced current gain and reduced hot-carrier degradation"
"IEEE Transactions on Device and Materials Reliability, Vol. 4, Issue 3, September 2004, pp. 509

N. Rinaldi, V. d'Alessandro
"Theory of electrothermal behavior of bipolar transistors: Part I - Single-finger devices"
IEEE Transactions on Electron Devices, Vol. 52, Issue 9, September 2005, pp. 2009-2021

N. Rinaldi, V. d'Alessandro
"Theory of electrothermal behavior of bipolar transistors: Part II - Two-finger devices"
IEEE Transactions on Electron Devices, Vol. 52, Issue 9, September 2005, pp. 2022-2033

N. D. Jankovic and A. O'Neill,
"2D device-level simulation study of strained-Si pnp heterojunction bipolar transistors on virtual substrates"
Solid-State Electronics, Vol. 48, Feb 2004, pp. 225-230

N. D. Jankovic and A. O'Neill,
"Performance evaluation of SiGe heterojunction bipolar transistors on virtual substrates"
Solid-State Electronics, Vol. 48, Feb 2004, pp. 277-284

Y. Shi, G. F. Niu, J. D. Cressler and et al.,
"On the consistent modeling of band-gap narrowing for accurate device-level simulation of scaled SiGe HBTs"
IEEE Trans. Electron Devices, Vol. 50, May 2003, pp. 1370-1377.

K. P. Roenker et al.
"Effects of Collector Heterojunction Displacement from its P-N Junction on the Unilateral Power Gain at 10 and 26 GHz in SiGe HBTs"
ICSI3 SiGe Conference, Santa Fe, New Mexico, March 2003

N. D. Jankovic et al.
"Performance Evaluation of SiGe HBTs on Virtual Substrates"
ICSI3 SiGe Conference, Santa Fe, New Mexico, March 2003.

W. B. Chen, Y. K. Su, L. C. Lin and et al.,
"Oxide confined collector-up heterojunction bipolar transistors"
Jpn. J. Appl. Phys. 1, Vol. 42, May 2003, pp. 2612-2614

M Falah, D Linton, J Williamson
"Design of Schottky diode using SILVACO/spl trade/"
High Frequency Postgraduate Student Colloquium, 2002.7th IEEE, 8-9 Sept. 2002 Page 7 pp

S. Y. Cheng,
"Comprehensive study of an InGaP/AlGaAs/GaAs heterojunction bipolar transistor with a continuous conduction-band structure"
Semiconductor Science and Technology, Vol. 17, Jul. 2002, pp. 701-707

S. Y. Cheng,
"Theoretical investigation of an InGaP/GaAs heterostructure-emitter bipolar transistor with a wide-gap collector"
Semiconductor Science and Technology, Vol. 17, May 2002, pp. 405-413

S Michael, P Michalopoulos
"Application of the SILVACO /ATLAS software package in modeling and optimization of state-of-the-art photovoltaic devices"
MWSCAS-2002 Vol.: 2 , Aug. 4-7, 2002 pp. 651 -654

M. J. Kumar and V. Parihar
"A new surface accumulation layer transistor(SALTran) concept for current gain enhancement in bipolar transistors"
Proceedings of the IEEE International Conference on VLSI Design, Vol. 17, 2004, pp. 827-831

S. V. Cherepko amd J. C. M. Hwang
"Implementation of NQS effects in large-signal BJT models"
"IEEE MTT-S International Microwave Symposium Digest, Vol. 2, 2003, pp. 647-650."

"M. Linder, F. Ingvarson, K. O. Jeppson, S. -L. Zhang, J. V. Grahn, M. O
"A new test structure for parasitic resistance extraction in bipolar transistors"
"IEEE International Conference on Microelectronic Test Structures, 2001, pp. 25-30."

S. Vainshtein, V. Yuferev, and J. Kostamovaara
"Nondestructive Current Localization Upon High-Current Nanosecond Switching of an Avalanche Transistor"
IEEE Trans. Electron Devices, Vol. 50, Sept. 2003, pp. 1988 - 1990

S. Y. Lee, H. S. Kim, S. H. Lee and et al.,
"The behavior of Ti silicidation on Si/SiGe/Si base and its effect on base resistance and f(max) in SiGe hetero-junction bipolar transistors"
Journal of Materials Science - Materials in Electronics, Vol. 12, 2001, pp. 467-472

M. Sanden, S. L. Zhang, J. V. Grahn and et al.,
"A new test structure for extracting extrinsic parameters in double-polysilicon bipolar transistors"
IEEE Trans. Electron Devices, Vol. 47, Sep 2000, pp. 1767 - 1769

Deignan A. McAuliffe D. Doyle D. Moloney K. Roche M.O'Neill M.,
"Dose Loss and Deffect Mechanismes in Antimony Buried Layers for a 0.35um BiCMOS Process"
Proc. ESSDERC 2000, pp. 273-275

S. C. Witczak, R. D. Schrimpf, H. J. Barnaby and et al.,
"Moderated degradation enhancement of lateral pnp transistors due to measurement bias"
IEEE Trans. Nuclear Science, Vol. 45, Dec. 1998, pp. 2644-2648

S. A. Lombardo, V. Privitera, A. Pinto and et al.,
"Band-gap narrowing and high-frequency characteristics of Si/GexSi1-x heterojunction bipolar transistors formed by Ge ion implantation in Si"
IEEE Trans. Electron Devices, Vol. 45, Jul. 1998, pp. 1531-1537

Zampardi, Peter Joseph PhD
"A study of new base pushout effect in modern bipolar transistors"
Univ of California, LA, 1997, 165 pp., AAT 9807643

L. Vendrame
"Optimisation of a link base implant for reducing the access base resistance of single-poly quasi self-aligned bipolar transistors"
ESSDERC 1996, pp.803-806

Kosier, DeLaus, Wei, Schrimpf, Martinez
"Simple Technique for Improving the Hot-Carrier Reliability of Single-Poly Bipolar Transistors"
IEEE, BIp/BICMOS Circs & Tech Mtg, Oct 1994

Z. R. Tang, T. Kamins and C. A. T. Salama
"Current gain-early voltage product in SiGe base HBTs with thin a-Si:H emitters"
Proc. ESSDERC 1994, pp.473-476

R. J. Graves et al
"Visualisation of ionising-radiation and hot-carrier stress response of polysilicon emitter BJTs"
Proc. IEDM Tech. Dig., 1994, pp.233 - 236

S. L. Kosier et al
"Charge Separation for Bipolar Transistors"
IEEE Trans on Nuclear Science Dec 1993

Wu, Fand-Man, PhD
"Structure analysis and modeling for a merged Bipmos device (subcircuits)"
North Dakota State Univ of Agriculture and Applied Science, 1992, 157 pp., AAT 9238089

M. Linder, B. G. Malm, P. Ma, J. V. Grahn, S. -L. Zhang, M. O
"The Effect of Emitter Overetch and Base Implantation Tilt on the Performance of Double Polysilicon Bipolar Transistors"
Physica Scripta T, Vol. 79, 1999, pp. 246-249